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MMBF4416LT1G 30V JFET Amplifier Transistor ON Semi

MMBF4416LT1G 30V JFET Amplifier Transistor ON Semi

Manufacturer: On Semiconductor
Part Number: MMBF4416LT1G
Voltage: 30
Package: SOT-23
Lead/Terminal Type: Surface Mount
Number Leads/Terminals: 3

Price: $0.24
1880 available for immediate delivery
Code: IC516PE04
Weight: 0.01oz ONZ
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Additional Information

JFET Amplifier Transistor
VHF/UHF
N-Channel

Description / Additional Information

Maximum Ratings
Drain-Source Voltage: 30V
Drain-Gate Voltage: 30V
Gate-Source Voltage: 30V
Gate Current: 10mA

Thermal Characteristics
Total Device Dissipation FR-5 Board,TA=25C: 225mW
Derate above 25C: 1.8mW/C
Thermal Resistance, Junction-to-Ambient: 556C/W
Junction and Storage Temperature: -55C to 150C

OFF Characteristics:
Gate-Source Breakdown Voltage (IG = 1.0 uAdc, VDS = 0): 30V min.
Gate Reverse Current (VGS = 20 Vdc, VDS = 0): 1.0nA max.
Gate Source Cutoff Voltage (ID = 1.0 nAdc, VDS = 15 Vdc): -6.0V max.
Gate Source Voltage (ID = 0.5 mAdc, VDS = 15 Vdc): -5.5V max.

ON Characteristics:
Zero-Gate-Voltage Drain Current (VGS = 15 Vdc, VGS = 0): 15mA max.
Gate-Source Forward Voltage (IG = 1.0 mAdc, VDS = 0): 1.0V max.

Small-Signal Characteristics:
Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz): 7500umhos max.
Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz): 50umhos max.
Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz): 4.0pF max.
Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 10 MHz): 0.8pF max.
Output Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz): 2.0pF max.

Manufactured by: ON Semiconductor
Part Number: MMBF4416LT1G

Full Datasheet: MMBF4416LT1G