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MJE170G 3A 40V PNP Power Transistor ON Semiconductor

MJE170G 3A 40V PNP Power Transistor ON Semiconductor

Manufacturer: ON Semiconductor
Part Number: MJE170G
Amps: 3
Voltage: 40
Watts: 12.5
Package: TO-225AA
Mounting: Through Hole
Lead/Terminal Type: Radial
Number Leads/Terminals: 3
Material: Plastic
Color: Black
Termination Method: Solder

Price: $0.20
2300 available for immediate delivery
Code: IC662APH04
Weight: 0.02oz ONZ
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100+$0.16
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Additional Information

Silicon Power Transistors
PNP

Maximum Ratings
Collector-Base Voltage: 60V
Collector-Emitter Voltage: 40v
Emitter-Base Voltage: 7.0V
Continuous Collector Current: 3.0A
Peak Collector Current: 6.0A
Base Current: 1.0A
Total Power Dissipation: 1.5W

Thermal Characteristics:
Thermal Resistance Junction to Case: 10C/W
Thermal Resistance Junction to Ambient: 83.4C/W

Electrical Characteristics (TA=25C unless otherwise noted):
ON CHARACTERISTICS
Collector-Emitter Sustaining Voltage: 40V min.
Collector Cutoff Current: 0.1uA max.
Emitter Cutoff Current: 0.1uA max.

OFF CHARACTERISTICS
DC Current Drain (IC = 100mA, VCE = 1.0V): 50 min.
Collector-Emitter Saturation (IC = 500mA, IB = 50mA): 0.3V max.
Base-Emitter Saturation Voltage (IC = 1.5A, IB= 150mA): 1.5V max.
Base-Emitter On Voltage (IC = 500mA, VCE = 1.0V): 1.2V max.

Manufactured by: ON Semiconductor
Part Number: MJE170G

Full Datasheet: MJE170G PNP Transistor ON Semi