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IRLL110 1.5A Power MosFET Transistor International Rectifier

IRLL110 1.5A Power MosFET Transistor International Rectifier

Manufacturer: International Rectifier
Part Number: IRLL110
Amps: 1.5
Voltage: 100
Package: SOT223
Lead/Terminal Type: Surface Mount
Number Leads/Terminals: 3

Price: $3.00
130 available for immediate delivery
Code: IC680APH02
Weight: 0.01oz ONZ
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Additional Information

HexFET Power MosFET Transistors

Features:
- Dynamic dv/dt Rating
- Repetitive Avalanche Rated
- Logic-Level Gate Drive
- RDS(on) Specified @ VGS = 4V & 5V
- Fast Switching

Maximum Ratings
Continuous Drain Current, VGS @ 5.0V (ID @ TC=25°C): 1.5A
Power Dissipation (PD @ TC = 25°C): 3.1W
Gate-to-Source Voltage: ±10V
Single Pulse Avalanche Energy: 50mJ
Peak Diode Recovery dv/dt: 5.5V/ns

Electrical Characteristics (TJ=25°C unless otherwise noted):
Drain-to-Source Breakdown Voltage (VGS = 0V, ID = 250uA): 100V min.
Static Drain-to-Source On-Resistance
- (VGS = 5.0V, ID = 0.90A): 0.54Ω max.
- (VGS = 4.0V, ID = 0.75A): 0.76Ω max.
Forward Transconductance (VDS = 25V, ID = 0.90A): 0.57S min.
Gate-to-Source Forward Leakage (VGS = 10V): 100nA max.
Charges (ID = 5.6A, VDS = 80V, VGS = 5.0V):
- Total Gate Charge: 6.1nC max.
- Gate-to-Source Charge: 2.6nC max.
- Gate-to-Drain("Miller") Charge: 3.3nC max.
Rise Time (VDD = 50V, ID = 5.6A, RG = 12Ω, RD = 8.4Ω): 47ns typ.
Fall Time (VDD = 50V, ID = 5.6A, RG = 12Ω, RD = 8.4Ω): 18ns typ.

Manufactured by: International Rectifier
Part Number: IRLL110

Full Datasheet: HexFET MosFET Transistors IRLL110