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MT4LC4M16R6-5F 4M x 16 EDO DRAM CMOS Memory IC Micron

MT4LC4M16R6-5F 4M x 16 EDO DRAM CMOS Memory IC Micron

Manufacturer: Micron
Part Number: MT4LC4M16R6-5F
Package: TSOP
Lead/Terminal Type: Surface Mount
Number Leads/Terminals: 50

Price: $10.00
26 available for immediate delivery
Code: IC681APH02
Weight: 0.03oz ONZ
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Additional Information

4M x 16 EDO DRAM CMOS Memory ICs

Configuration: 4 Meg x 16
Refresh: 4K
Row Address: 4K (A0-A11)
Column Address: 1K (A0-A9)
Timing: 50ns

The MT4LC4M16R6-5F is high-speed CMOS dynamic random-access memory IC. It operates on 3.0V to 3.6V and has 67,108,864 bits. The memory locations are organized in 4,096 rows by 1,024 columns.

Features:
- Single +3.3V ±0.3V power supply
- Industry-standard x16 pinout, timing, functions,and package
- High-performance CMOS silicon-gate process
- All inputs, outputs and clocks are LVTTL-compatible
- Extended Data-Out (EDO) PAGE MODE access
- 4,096-cycle CAS#-BEFORE-RAS# (CBR) REFRESH distributed across 64ms

DC Electrical Characteristics:
Supply voltage: 3.0V - 3.6V
Input High Voltage (Valid Logic 1; All inputs, I/Os and any NC): 2.0V to VCC + 0.3V
Input Low Voltage (Valid Logic 0; All inputs, I/Os and any NC): -0.3V to 0.8V
Input Leakage Current: -2.0uA to 2.0uA
Output High Voltage (IOUT = -2mA): 2.4V min
Output Low Voltage (IOUT = 2mA): 0.4V max.
Output Leakage Current: -5.0uA to 5.0uA

ICC Operating Conditions and Maximum Limits (See Data Sheet for Conditions):
Standby Current TTL: 1mA
Standby Current CMOS: 500uA
Operating Current Random READ/WRITE: 150mA
Operating Current EDO Page Mode: 120mA
Refresh Current RAS#-Only: 150mA
Refresh Current CBR: 150mA

Capacitance
Input Capacitance: Address pins: 5pF max.
Input Capacitance: RAS#, CAS#, WE#, OE#: 7pF max.
Input/Output Capacitance: DQ: 7pF max.

Manufactured by: Micron
Part Number: MT4LC4M16R6-5F

Full Datasheet: Micron EDO DRAM 4M x 16 MT4LC4M16R6-5F