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BC847BW E6327 NPN AF Transistor Infineon

BC847BW E6327 NPN AF Transistor Infineon

    Manufacturer: Infineon
    Part Number: BC847BW
    Voltage: 45
    Package: SOT-323
    Lead/Terminal Type: Surface Mount
    Number Leads/Terminals: 3
    RoHS Compliant: Yes

    Price: $0.10
    2960 available for immediate delivery
    Code: J491APF12
    Weight: 0.01oz ONZ
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    Additional Information

    NPN Silicon AF Transistors

    Features:
    - For AF input stages and driver applications
    - High current gain
    - Low collector-emitter saturation voltage
    - Low noise between 30 Hz and 15 kHz

    DC Electrical Characteristics (TA=25�C unless otherwise noted):
    Collector-emitter breakdown voltage (IC = 10 mA, IB = 0): 45V min.
    Collector-base breakdown voltage (IC = 10 uA, IE = 0): 50V min.
    Emitter-base breakdown voltage (IE = 0 , IC = 10 uA): 5.0V typ.
    Collector-base cutoff current
    - VCB = 45 V, IE = 0: 0.015uA typ.
    - VCB = 30 V, IE = 0 , TA = 150 �C: 5.0uA typ.
    Collector-emitter saturation voltage
    - IC = 10 mA, IB = 0.5 mA: 90mV typ. ; 250mV max.
    - IC = 100 mA, IB = 5 mA: 200mV typ. ; 60mmV max.
    Base emitter saturation voltage
    - IC = 10 mA, IB = 0.5 mA: 700mV typ.
    - IC = 100 mA, IB = 5 mA: 900mV typ.
    Base-emitter voltage
    - IC = 2 mA, VCE = 5 V: 580mV min. ; 660V typ. ; 700mV max.
    - IC = 10 mA, VCE = 5 V: 770mV max.

    AC Electrical Characteristics (TA=25�C unless otherwise noted):
    Transition frequency (IC = 10 mA, VCE = 5 V, f = 100 MHz): 250MHz typ.
    Collector-base capacitance (VCB = 10 V, f = 1 MHz): 0.95pF typ.
    Emitter-base capacitance (VEB = 0.5 V, f = 1 MHz): 9.0pF typ.
    Noise figure: 1.2dB typ. ; 4.0dB max.
    Equivalent noise voltage: 0.135uV max.

    Manufactured by: Infineon
    Part Number: BC847BW

    Full Datasheet: SMT NPN Transistor BC847BW