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TN0610N3-G .5 A 100V N-Channel MOSFET Transistor Supertex

TN0610N3-G .5 A 100V N-Channel MOSFET Transistor Supertex

Manufacturer: Supertex
Part Number: TN0610N3-G
Amps: .5
Voltage: 100
Watts: 1
Ohms: 1.5
Package: TO-92
Mounting: Through Hole
Lead/Terminal Type: Radial
Number Leads/Terminals: 3
Material: Plastic
Color: Black
Temperature: 150
RoHS Compliant: Yes
Termination Method: Solder

Price: $0.50
3692 available for immediate delivery
Code: J682APK11
Weight: 0.10oz ONZ
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Additional Information

Enhancement Mode Vertical DMOS FET Transistors

The TN0610N3-G combines vertical DMOS structure and silicon-gate manufacturing. This device has the power handling capabilities of bipolar transistors along with the high input impedance and positive temperature coefficient of MOS devices.

Features:
- Low threshold - 2.0V max.
- High input impedance
- Low input capacitance - 100pF typical
- Fast switching speeds
- Low on-resistance
- Free from secondary breakdown
- Low input and output leakage

Thermal Characteristics:
ID (continuous): 500mA
ID (pulsed): 3.2 A
Power Dissipation: 1.0W

Electrical Specifications:
Drain-to-source breakdown voltage: 100V min.
Gate threshold voltage: 0.6V min. ; 2.0V max.
Gate body leakage: 100nA max.
On-state drain current (VGS= 5.0V, VDS= 25V): 1.2 A min. ; 2.0A typ. Static drain-to-source on-state resistance (VGS= 5.0V, ID= 750mA): 1.5 ohm typ. ; 2.0 ohm max.

Applications:
- Logic level interfaces - ideal for TTL and CMOS
- Solid state relays
- Battery operated systems
- Photo voltaic drives
- Analog switches
- General purpose line drivers
- Telecom switches

Manufactured by: Supertex
Part Number: TN0610N3-G

Full Datasheet: Vertical DMOS FET Transistor TN0610N3-G

RoHS Compliant