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IRF830 4.5A 500V HEXFET Power MOSFET Transistor International Rectifier

IRF830 4.5A 500V HEXFET Power MOSFET Transistor International Rectifier

Manufacturer: International Rectifier®
Part Number: IRF830
Amps: 4.5
Voltage: 500
Package: TO-220AB
Mounting: Through Hole
Lead/Terminal Type: Radial
Number Leads/Terminals: 3
Color: Black
Temperature: 150
Termination Method: Solder

Price: $0.50
7362 available for immediate delivery
Code: J699APL02
Weight: 0.10oz ONZ
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Additional Information

MosFET Power Transistors

Features:
- Dynamic dv/dt Rating
- Repetitive Avalanche Rated
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements

Electrical Characteristics (TJ=25°C unless otherwise noted):

Drain-to-Source Breakdown Voltage (VGS = 0V, ID = -250uA): 500V min.
Static Drain-to-Source On-Resistance (VGS = -10V, ID = 2.7A): 1.5Ω max.
Forward Transconductance (VDS = 50V, ID = 2.7A): 2.5S min.
Drain-to-Source Leakage Current (VDS = 500V, VGS = 0V): 250uA max.
Total Gate Charge (ID = 3.1A, VDS = 400V, VGS = 10V): 38nC max.
Gate-to-Source Charge (ID = 3.1A, VDS = 400V, VGS = 10V): 5.0nC max.
Gate-to-Drain ("Miller") Charge(ID = 3.1A, VDS = 400V, VGS = 10V): 22nC
Turn-On Delay Time (VDD =250V, ID = 3.1A, RG = 12Ω, RD = 79Ω): 8.2ns typ.
Turn-Off Delay Time (VDD =250V, ID = 3.1A, RG = 12Ω, RD = 79Ω)): 45ns typ.
Internal Drain Inductance (Between lead,6mm (0.25in.)from package and center of die contact): 4.5nH typ.
Internal Source Inductance (Between lead,6mm (0.25in.)from package and center of die contact): 7.5nH typ.

Source-Drain Ratings and Characteristics

Continuous Source Current (Body Diode): 4.5A max.
Pulsed Source Current (Body Diode): 18A max.
Diode Forward Voltage (TJ = 25°C, IS = 4.5A, VGS = 0V): 1.6V max.

Manufactured by: International Rectifier®
Part Number: IRF830

Full Datasheet: 4.5A 500V MOSFET Transistors International Rectifier®