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IRFP151 40A 60V Power MOS Field-Effect Transistor Samsung

IRFP151 40A 60V Power MOS Field-Effect Transistor Samsung

Manufacturer: Samsung
Part Number: IRFP151
Amps: 40
Voltage: 60
Ohms: .045
Mounting: Through Hole
Lead/Terminal Type: Radial
Number Leads/Terminals: 3
Color: Black
Temperature: 150
Termination Method: Solder

Price: $5.00
60 available for immediate delivery
Code: K117APL11
Weight: 0.20oz ONZ
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Additional Information

High Voltage Power MOSFET Transistors
N-Channel Enhancement-Mode

Features:
- SOA is power-dissipation limited
- Nanosecond switching speeds
- Linear transfer characteristics
- High input impedance
- Majority carrier device

Drain-Source Breakdown Voltage: 60V
Gate Threshold Voltage: 2.0V to 4.0V
Gate-Source Leakage Forward: 500nA max.
Gate-Source Leakage Reverse: -500nA max.
Zero Gate Voltage Drain Current: 250uA max.
On-State Drain Current: 40A
Static Drain-Source On-State Resistance: 0.045 ohm typ.
Input Capacitance: 2400pF typ.
Continuous Source Current (Body Diode): 40A max.
Pulse Source Current (Body Diode): 170A max.
Diode Forward Voltage: 2.5V max.
Reverse Recovery time: 530ns max.
Operating Temperature Range: -55 deg. C to 150 deg. C

Applications:
- Switching Regulators
- Switching Converters
- Motor Drivers
- Relay Drivers

Manufactured by: Samsung
Part Number: IRFP151

For reference only, we are providing a datasheet for this part number. Please note it is from an unspecified manufacturer. West Florida Components assumes no liability for this information.

Full Datasheet: N-Channel Power Transistors IRFP151