NDP603AL 25A 30V N-Channel Logic Level Transistor National Semiconductor
Manufacturer: National Semiconductor
Part Number: NDP603AL
Amps: 25
Voltage: 30
Watts: 50
Package: TO-220AB
Mounting: Through Hole
Lead/Terminal Type: Radial
Number Leads/Terminals: 3
Color: Black
Temperature: 175
Termination Method: Solder
Price: $1.00
409 available for immediate delivery
Code: K118APL11
Weight: 0.10oz
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Additional Information
N-Channel TransistorsLogic Level Enhancement Mode Field Effect
NDP603AL transistors are suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features:
- Critical DC electrical parameters specified at elevated temperature.
- Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
- High density cell design for extremely low RDS(ON)
Maximum Ratings
Drain-Source Voltage: 30V
Gate-Source Voltage-Continuous: +/- 20V
Drain Current
- Continuous: 25A
- Pulsed: 100A
Total power Dissipation @ TC=25 deg. C: 50W
- Dearte above 25 deg. C: 0.4 W/deg. C
Operating and Storage Temperature: 275 deg. C
Drain Source Avalanche Ratings
Single Pulse Drain-Source Avalanche Energy: 100mJ max.
Maximum Drain-Source Avalanche Current: 25A max.
OFF Characteristics
Drain-Source Breakdown Voltage: 30V min.
Zero Gate Voltage Drain Current: 10uA max.
ON Characteristics
Gate Threshold Voltage (VDS= VGS,ID= 250uA): 1.5V typ.
Static Drain-Source On-Resistance (VGS= 10 V,ID= 25A): 0.019 ohm
On-State Drain Current (VGS= 10 V, VDS= 10 V): 60A min.
DYNAMIC Characteristics
Input Capacitance: 1100pF typ
Output Capacitance: 540pF typ
Reverse Transfer Capacitance: 175pF typ
Switching Characteristics
Turn-On Delay Time: 15ns typ
Turn-On Rise Time: 70ns typ
Turn-Off Delay Time: 90ns typ
Turn-Off Fall Time: 80ns typ
Manufactured by: National Semiconductor
Part Number: NDP603AL
Full Datasheet: 25A 30V Field Effect Transistors National Semi