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2N6027 1A 1 Amp 40V Programmable Unijunction Transistor

2N6027 1A 1 Amp 40V Programmable Unijunction Transistor

Manufacturer: General Electric
Part Number: 2N6027
Amps: 1a
Voltage: 40V
Package: TO-92
Lead/Terminal Type: Radial
Number Leads/Terminals: 3

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Code: T313PD
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Additional Information


Programmable Unijunction Transistors
TO-92 Package

Designed to give the engineer the ability to “program’’ unijunction characteristics such as RBB, h, IV, and IP by simply selecting two resistor values. The availability of an anode gate makes it possible to use these devices in special thyristor applications.

Max. Ratings (TA=25°C unless otherwise noted):
Power Dissipation: 300mW
Derate Above 25°C: 4mW/°C
DC Forward Anode Current: 150ma
Derate Above 25°C: 2.67mA/°C
DC Gate Current: ±52mA
Repetitive Peak Forward Current:
-100 ms Pulse Width, 1% Duty Cycle: 1A
-20 ms Pulse Width, 1% Duty Cycle: 2A
Non–Repetitive Peak Forward Current 10 ms Pulse Width: 5A
Gate to Cathode Forward Voltage: 4V
Gate to Cathode Reverse Voltage: -5.0V
Gate to Anode Reverse Voltage: 40V
Anode to Cathode Voltage: ±40V
Operating Junction Temperature: -50°C to 100°C

Thermal Characteristics:
Thermal Resistance, Junction to Case: 75°C/W
Thermal Resistance, Junction to Ambient: 200°C/W
Maximum Lead Temperature for Soldering Purposes: 260°C
(<1/16, from case, 10 secs max)

Electrical Characteristics (TA=25°C unless otherwise noted):
Peak Current: 1.25µA typ. ; 2.0µA max
(VS = 10 Vdc, RG = 1 MW)
Offset Voltage: 0.2V min. ; .70V typ. ; 1.6V max.
(VS = 10 Vdc, RG = 1 MW)
Valley current: 18µA typ. ; 50µA max.
(VS = 10 Vdc, RG = 1 MW)
Gate to Anode Leakage Current: 1.0nAdc typ. ; 10nAdc max.
(VS = 40 Vdc, TA = 25°C, Cathode Open)
Gate to Cathode Leakage Current: 5nAdc typ. ; 50nAdc max.
(VS = 40 Vdc, Anode to Cathode Shorted)
Forward Voltage: 0.8V typ. ; 1.5V max
(IF = 50 mA Peak)
Peak Output Voltage: 6V min. ; 11V typ.
(VG = 20 Vdc, CC = 0.2 mF)
Pulse Voltage Rise Time: 40ns typ. ; 80ns max.
(VB = 20 Vdc, CC = 0.2 mF)

Manufactured by: GE
Part number: 2N6027