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PN4119A 50mA -40V N-Channel JFET Transistor

PN4119A  50mA  -40V N-Channel JFET Transistor

Manufacturer: Siliconix
Part Number: PN4119A
Amps: .05A
Voltage: -40V
Package: TO-92
Lead/Terminal Type: Radial
Number Leads/Terminals: 3

Price: $0.50
3 available for immediate delivery
Code: T320PD
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Additional Information


N-Channel JFET Amplifier Transistors
TO-92 Package

Max. Ratings:
Gate-source/Gate Drain Voltage: -40V
Forward Gate Current: 50mA
Power Dissipation(case 25�C): 300mW
Derate 2mW/�C above 25�C
Operating Junction Temperature: -55�C to 175�C
Lead Temperature (1/16" from case for 10sec.): 300�C

Static Specs (TA=25�C unless otherwise noted):
Gate-Source Breakdown Voltage: -10V min. ; -70V typ.
(IG = −1 �A , VDS = 0 V)
Gate-Source Cutoff Voltage: -2V min. ; -6V max.
(VDS = 10 V, ID = 1 nA)
Saturation Drain Current: 200�A min. ; 600�A max.
(VDS = 10 V, VGS = 0 V)
Gate Reverse Current: -0.2pA typ. ; -1pA max
(VGS = −10 V, VDS = 0 V)
Gate Operating Current: -0.2pA typ.
(VDG = 15 V, ID = 30 �A)
Drain Cutoff Current: 0.2pA typ.
(VDS = 10 V, VGS = −8 V)
Gate-Source Forward Voltage: 0.7V typ.
(IG = 1 mA , VDS = 0 V)

Dynamic Specs:
Common-Source Forward Transconductance: 100�S min. ; 330�S max.
(VDS = 10 V, VGS = 0 V, f = 1 kHz)
Common-Source Output Conductance: 10�S max.
(VDS = 10 V, VGS = 0 V, f = 1 kHz)
Common-Source Input Capacitance: 1.2pF typ. ; 3pF max.
(VDS = 10 V, VGS = 0 V, f = 1 MHz)
Common-Source Reverse Transfer Capacitance: 0.3pF typ. ; 1.5pF max.
(VDS = 10 V, VGS = 0 V, f = 1 MHz)

Features/Benefits:
Insignificant Signal Loss/Error Voltage with High-Impedance Source
Low Power Consumption (Battery)
Maximum Signal Output, Low Noise
High Sensitivity to Low-Level Signals
Ultra-Low Leakage: 0.2 pA
Very Low Current/Voltage Operation
Ultrahigh Input Impedance
Low Noise

Applications:
High-Impedance Transducer Amplifiers
Smoke Detector Input
Infrared Detector Amplifier
Precision Test Equipment

Manufactured by: Siliconix (Vishay)
Part number: PN4119A

Full datasheet: PN4119A