BUZ80FI N-Channel Power MOS Transistor ST Microelectronics
Manufacturer: ST Microelectronics
Part Number: BUZ80FI
Package: ISOWATT220
Lead/Terminal Type: Radial
Number Leads/Terminals: 3
Price: $2.25
2000 available for immediate delivery
Code: T326PE04
Weight: 0.07oz
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Additional Information
N-Channel Power MOS TransistorsPackage: ISOWATT220
Features:
- Avalanche Ruggedness Technology
- 100% Avalanche Tested
- Repetitive Avalanche Data @ 100°C
- Low Input Capacitance
- Low Gate Charge
Description / Additional Information
Maximum Ratings
Drain-source Voltage (VGS = 0): 800V
Drain- gate Voltage (RGS = 20 kΩ): 800V
Gate-source Voltage: ±20V
Drain Current (continuous):
- TC = 25°C: 2.1A
- TC = 100°C: 1.3A
Drain Current (pulsed): 13A
Total Dissipation @ TC = 25°C: 40W
Derating Factor: 0.32W/°C
Insulation Withstand Voltage (DC): 2000V
Storage Temperature: -65°C to 150°C
Max. Operating Junction Temperature: 150°C
Applications:
- High current, High Speed Switching
- Switch mode Power Supplies (SMPS)
- Consumer and Industrial Lighting
- DC-AC Inverters for Welding Equipment and UPS's
Manufactured by: ST Microelectronics
Part Number: BUZ80FI
Full Datasheet: BUZ80FI