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2N3716 JANTX2N3716 4A 80V Military Transistor

2N3716 JANTX2N3716 4A 80V Military Transistor

Manufacturer: Microsemi
Part Number: JANTX2N3716
Amps: 4a
Voltage: 80V
Package: TO-3
Lead/Terminal Type: Radial
Number Leads/Terminals: 2
Material: Silicon

Price: $225.75
7 available for immediate delivery
Code: T458PD

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Additional Information


Military Power Transistors
Qualified per MIL-PRF-19500/408
NPN

Maximum Ratings:
Collector-Emitter Voltage: 80V
Collector-Base Voltage: 100V
Emitter-Base Voltage: 7.0V
Base Current: 4.0A
Collector Current: 10A
Total Power Dissipation:
- TA=25°C: 5.0W
- TC=100°C: 85.7W
- Derate linearly 28.57 mW/°C for TA >25°C
- Derate linearly 0.857 W/°C for TC >100°C
Operating & Storage Junction Temperature: -65°C to 200°C
Thermal Resistance, Junction-to-Case: 1.17°C/W

Electrical Characteristics OFF (TC=25°C unless otherwise noted):
Collector-Emitter Breakdown Current @ IC=10mA: 80V min.
Collector-Base Cutoff Current @ VCB=100V: 10µA max.
Emitter-Base Breakdown Voltage @ VEB=7V: 1mA max.
Collector-Emitter Cutoff Current @ VBE=1.5V, VCE=80V: 1.0mA max.

Electrical Characteristics ON
- (Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.)
Forward-Current Transfer Ratio:
- IC = 1.0 Adc, VCE = 2.0 Vdc: 50 min , 150 max
- IC = 3.0 Adc, VCE = 2.0 Vdc: 30 min , 120 max
- IC = 5.0 Adc, VCE = 2.0 Vdc: 10 min
- IC = 10 Adc, VCE = 4.0 Vdc: 5 min.
Collector-Emitter Saturation Voltage:
- IC = 5.0 Adc, IB = 0.5 Adc: 1.0V max
- IC = 10 Adc, IB = 2.0 Adc: 2.5V max
Base-Emitter Saturation Voltage:
- IC = 5.0 Adc, IB = 0.5 Adc: 1.5V
- IC = 10 Adc, IB = 2.0 Adc: 3.0V

Manufactured by: Silicon Transistor Corp. (Microsemi)
Part Number: JANTX 2N3716

Full Datasheet: JANTX 2N3716