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MTW45N10E 45A 100V MOSFET ON Semiconductor

MTW45N10E 45A 100V MOSFET ON Semiconductor

Manufacturer: On Semiconductor
Part Number: MTW45N10E
Amps: 45A
Voltage: 100V
Package: TO-247
Lead/Terminal Type: Radial
Number Leads/Terminals: 3

Price: $8.18
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Code: T496PE01
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Additional Information


Power MOSFET
Obsolete Part
N-Channel
TO-247 Package

Features:
- Avalanche Energy Specified
- Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
- Diode is Characterized for Use in Bridge Circuits
- IDSS and VDS(on) Specified at Elevated Temperature
- Isolated Mounting Hole Reduces Mounting Hardware

TYPICAL ELECTRICAL CHARACTERISTICS (TJ=25C unless otherwise noted)

OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 mAdc): 100VDC min.
Zero Gate Voltage Drain Current (VDS = 100 Vdc, VGS = 0 Vdc): 10uA max.
Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0): 100nA max.

ON CHARACTERISTICS
Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc): 2V to 4V
Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 22.5 Adc): 0.027Ω
Forward Transconductance (VDS = 10 Vdc, ID = 22.5 Adc): 12mhos min.

DYNAMIC CHARACTERISTICS
Input Capacitance (VDS-25V, VGS=0V, f=1.0MHz): 3480pF
Output Capacitance (VDS-25V, VGS=0V, f=1.0MHz): 1240pF
Reverse Transfer Capacitance (VDS-25V, VGS=0V, f=1.0MHz): 315pF

SWITCHING CHARACTERISTICS
Turn-On Delay Time (VDD= 50V, ID=45A, VGS=10V, RG=9.1Ω): 25ns
Rise Time (VDD= 50V, ID=45A, VGS=10V, RG=9.1Ω): 234ns
Turn-Off Delay Time (VDD= 50V, ID=45A, VGS=10V, RG=9.1Ω): 83ns
Gate Charge-QT (VDS = 80 Vdc, ID = 45 Adc,VGS=10V): 106nC

SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage (IS = 45 Adc, VGS = 0 Vdc): 1.09V
Reverse Recovery Time-trr (IS = 45 Adc VGS = 0 Vdc,dIS/dt = 100 A/ms): 166ns
Reverse Recovery Stored Charge (IS = 45 Adc VGS = 0 Vdc,dIS/dt = 100 A/ms): 1.1uC

Manufactured by: ON Semiconductor
Part Number: MTW45N10E

Full Datasheet: MTW45N10E