Clicky

MTW45N10E 45A 100V MOSFET ON Semiconductor

MTW45N10E 45A 100V MOSFET ON Semiconductor

Manufacturer: On Semiconductor
Part Number: MTW45N10E
Amps: 45A
Voltage: 100V
Package: TO-247
Lead/Terminal Type: Radial
Number Leads/Terminals: 3

Price: $8.18
Sorry, we are currently sold out of
'MTW45N10E 45A 100V MOSFET ON Semiconductor'.
Please check back later.
Code: T496PE01
Volume Pricing
Quantity Price Each
1-9$8.18
10+$8.00

First Class Mail Shipping Costs:

Order Total Minimum
 Order Total Maximum
 USA First Class Shipping Rates
$00.01
 $25.00
 $5.85
$25.01
 $35.00
 $6.85
$35.01
 $45.00
 $8.85
$45.01
 $55.00
 $9.85
$55.01
 $75.01
 $11.85
$75.01
 $100.00
 $12.85
$100.01
 $200.00
 $14.85
$200.01
 $300.00
 $15.85
$300.01
 $500.00
 $17.85
$500.01
 +
 $18.85

Priority Mail Shipping Costs:

Order Total Minimum
 Order Total Maximum
 USA Priority Mail Shipping Rates
$00.01
 $25.00
 $10.50
$25.01
 $35.00
 $11.50
$35.01
 $45.00
 $12.50
$45.01
 $55.00
 $13.50
$55.01
 $75.01
 $14.50
$75.01
 $100.00
 $16.50
$100.01
 $200.00
 $18.50
$200.01
 $300.00
 $21.50
$300.01
 $500.00
 $24.50
$500.01
 +
 $25.50

Canada First Class International (see Shipping page for exclusions)

Order Total Minimum
 Order Total Maximum
 Canada First Class International
$00.01
 $45.00
 $15.95
$45.01
 $90.00
 $29.95
$90.01
 $150.00
 $49.95
$150.01
 $300.00
 $59.95
$300.01
 $700.00
 $79.95
$700.01
 $2000.00
 $99.95

Canada Priority Mail (see Shipping page for exclusions)

Order Total Minimum
 Order Total Maximum
 Canada Priority Mail
$00.01
 $45.00
 $36.95
$45.01
 $90.00
 $45.95
$90.01
 $150.00
 $59.95
$150.01
 $300.00
 $79.95
$300.01
 $700.00
 $99.95
$700.01
 $2000.00
 $109.95

International - Outside US / CA (see Shipping page for exclusions)

Order Total Minimum
 Order Total Maximum
 International - Outside US / CA
$100.00
 $150.00
 $79.95
$150.01
 $300.00
 $99.95
$300.01
 $500.00
 $139.95
$500.01
 $1000.00
 $169.95
  View shipping costs

Additional Information


Power MOSFET
Obsolete Part
N-Channel
TO-247 Package

Features:
- Avalanche Energy Specified
- Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
- Diode is Characterized for Use in Bridge Circuits
- IDSS and VDS(on) Specified at Elevated Temperature
- Isolated Mounting Hole Reduces Mounting Hardware

TYPICAL ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise noted)

OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 mAdc): 100VDC min.
Zero Gate Voltage Drain Current (VDS = 100 Vdc, VGS = 0 Vdc): 10uA max.
Gate-Body Leakage Current (VGS = ± 20 Vdc, VDS = 0): 100nA max.

ON CHARACTERISTICS
Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc): 2V to 4V
Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 22.5 Adc): 0.027Ω
Forward Transconductance (VDS = 10 Vdc, ID = 22.5 Adc): 12mhos min.

DYNAMIC CHARACTERISTICS
Input Capacitance (VDS-25V, VGS=0V, f=1.0MHz): 3480pF
Output Capacitance (VDS-25V, VGS=0V, f=1.0MHz): 1240pF
Reverse Transfer Capacitance (VDS-25V, VGS=0V, f=1.0MHz): 315pF

SWITCHING CHARACTERISTICS
Turn-On Delay Time (VDD= 50V, ID=45A, VGS=10V, RG=9.1Ω): 25ns
Rise Time (VDD= 50V, ID=45A, VGS=10V, RG=9.1Ω): 234ns
Turn-Off Delay Time (VDD= 50V, ID=45A, VGS=10V, RG=9.1Ω): 83ns
Gate Charge-QT (VDS = 80 Vdc, ID = 45 Adc,VGS=10V): 106nC

SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage (IS = 45 Adc, VGS = 0 Vdc): 1.09V
Reverse Recovery Time-trr (IS = 45 Adc VGS = 0 Vdc,dIS/dt = 100 A/ms): 166ns
Reverse Recovery Stored Charge (IS = 45 Adc VGS = 0 Vdc,dIS/dt = 100 A/ms): 1.1uC

Manufactured by: ON Semiconductor
Part Number: MTW45N10E

Full Datasheet: MTW45N10E