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IRL540NS 36A 100V MosFET International Rectifier

IRL540NS 36A 100V MosFET International Rectifier

Manufacturer: International Rectifier®
Part Number: IRL540NS
Capacitance (uF): .0018 (input)
Amps: 36
Voltage: 100 (Drain to Source)
Watts: 140
Package: D2PAK
Mounting: Surface Mount
Number Leads/Terminals: 3
Color: Black
Temperature: -55 to 175°C
Termination Method: Solder

Price: $1.20
1502 available for immediate delivery
Code: T542PE05
Weight: 0.05oz ONZ
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Additional Information

HexFET® Power MosFETs
Surface Mount D2Pak

Description / Additional Information

Features:
- Advanced Process Technology
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated

Electrical Characteristics (TJ=25°C unless otherwise noted):
Drain-to-Source Breakdown Voltage (VGS = 0V, ID = 250μA): 100V min.
Static Drain-to-Source On-Resistance (VGS = 10V, ID = 18A): 0.044Ω max.
Forward Transconductance (VDS = 25V, ID = 18A): 14S min.
Drain-to-Source Leakage Current (VDS = 100V, VGS = 0V): 25A max.
Gate-to-Source Charge (ID =18A, VDS = 80V, VGS = 5.0V): 9.4nC max.
Typical Times (VDD = 50V, ID = 18A, RG = 5.0W, VGS = 5.0V,RD = 2.7Ω)
- Turn-On Delay: 11ns
- Rise: 81ns
- Turn-Off Delay: 39ns
- Fall: 62ns
Typical Capacitance (VGS = 0V,VDS = 25V, f = 1.0MHz)
- Input: 1800pF
- Output: 350pF
- Reverse Transfer: 170pF

Source Drain Ratings & Characteristics;
Continuous Source Current (Body Diode): 36A max.
Pulsed Source Current (Body Diode): 120A max.
Diode Forward Voltage (TJ = 25°C, IS = 18A, VGS = 0V): 1.3V max.
Reverse Recovery Time (TJ = 25°C, IF = 18A, di/dt = 100A/μs): 190ns typ.
Reverse Recovery Charge (TJ = 25°C, IF = 18A, di/dt = 100A/μs): 1.1 μC typ.

Manufactured by: International Rectifier®
Part Number: IRL540NS

Full Datasheet: IRL540NS