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IRGBC30MD2 IGBT Insulated Gate Bipolar Transistor International Rectifier

Manufacturer: International Rectifier
Part Number: IRGBC30MD2
Voltage: 600
Package: TO-220AB
Number Leads/Terminals: 3

Price: $3.00
81 available for immediate delivery
Code: T567PF01
Weight: 0.07oz ONZ
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Additional Information

IGBT Insulated Gate Bipolar Transistors
N-Channel

Features:
- Short circuit rated -10μs @125C, V GE = 15V
- Switching-loss rating includes all "tail" losses
- HEXFRED soft ultrafast diodes
- Optimized for medium operating frequency (1 to 10kHz)

Maximum Ratings
Collector-to-Emitter Voltage: 600V
Continuous Collector Current (IC @ TC=25C): 26A
Pulsed Collector Current: 52A
Clamped Inductive Load Current: 52A
Diode Continuous Forward Current (IF @ TC = 100C): 12A
Diode Maximum Forward Current: 52A
Short Circuit Withstand Time: 10us
Gate-to-Emitter Voltage: 20V
Maximum Power Dissipation (PD @ TC = 25C): 100W
Operating Junction and Storage Temperature Range: -55C to 150C

Thermal Resistance:
Junction-to-Case (IGBT): 1.2C/W max.
Junction-to-Case (Diode): 2.5C/W max.
Case-to-Sink, flat, greased surface: 0.50C/W typ.
Junction-to-Ambient, typical socket mount: 80C/W max.

Manufactured by: International Rectifier
Part Number: IRGBC30MD2

Full Datasheet: IRGBC30MD2