TIM7785-35SL 20A 15V SMT Microwave Power GaAs FET Transistor Toshiba
Manufacturer: Toshiba
Part Number: TIM7785-35SL
Amps: 20
Voltage: 15
Watts: 115.4
Package: 2-16G1B
Mounting: Surface Mount
Temperature: 175
Price: $100.00
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'TIM7785-35SL 20A 15V SMT Microwave Power GaAs FET Transistor Toshiba'.
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'TIM7785-35SL 20A 15V SMT Microwave Power GaAs FET Transistor Toshiba'.
Please check back later.
Code: T666APP09
Weight: 0.50oz
Additional Information
Microwave Power GaAs FET TransistorsSurface Mount
Features:
- Broad Band Internally Matched FET
- High Power P1dB=45.5dBm at 7.7GHz to 8.5GHz
- High Gain G1dB=6.0dB at 7.7GHz to 8.5GHz
- Low Intermodulation Distortion IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level
Maximum Ratings
Drain-Source Voltage: 15.0V
Gate-Source Voltage: -5.0V
Drain Current: 20.0A
Total Power Dissipation (TC=25 Deg. C): 115.4W
Channel Temperature: 175 Deg. C.
Manufactured by: Toshiba
Part Number: TIM7785-35SL
Full Datasheet: Toshiba SMD RF N-Channel Transistor