IRF630N 9.3A 200V .30 ohm MosFET Power Transistor International Rectifier
Manufacturer: International Rectifier
Part Number: IRF630N
Amps: 9.3
Voltage: 200
Watts: 82
Ohms: .30
Package: TO-220
Mounting: Through Hole
Number Leads/Terminals: 3
Color: Black
Temperature: 175
Obsolete: Yes
Termination Method: Solder
Price: $0.80
100 available for immediate delivery
Code: T691APP11
Weight: 0.30oz
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Additional Information
HEXFET Power MosFET TransistorsObsolete
Features:
- Advanced Process Technology
- Dynamic dv/dt Rating
- Fast Switching
- Fully Avalanche Rated
- Ease of Paralleling
- Simple Drive Requirements
Continuous Drain Current, VGS @ 10V: 9.3A (max)
Drain-to-Source Breakdown Voltage: 200V (min)
Gate-to-Source Voltage: +/-20.0V (max)
Static Drain-to-Source On-Resistance: 0.30 ohms (max)
Power Dissipation: 82.0W (max)
Single Pulse Avalanche Energy: 94.0mJ (max)
Forward Transconductance: 4.9 sec. (min)
Total Gate Charge: 35.0nC (max)
Operating Junction Temperature: -55 to 175 Deg. C.
Manufactured by: International Rectifier
Part Number: IRF630N
Full Datasheet: International Rectifier HexFET Transistor 200 Volt 9.3 Amp