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2SK3567 3.5A 600V N-Channel MosFET Transistor Toshiba®

2SK3567 3.5A 600V N-Channel MosFET Transistor Toshiba®

Manufacturer: Toshiba®
Part Number: 2SK3567
Capacitance (uF): .00055
Amps: 3.5
Voltage: 600
Ohms: 1.7
Package: TO-220FP-3
Mounting: Through Hole
Lead/Terminal Type: Straight
Number Leads/Terminals: 3
Color: Black
Temperature: 150
Obsolete: Yes
Termination Method: Solder

Price: $1.50
150 available for immediate delivery
Code: T824APR07
Weight: 0.02oz ONZ
Quantity:

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Additional Information

N-Channel MosFET Transistors
For switching applications
Obsolete

Features:
- Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.)
- High forward transfer admittance: |Yfs| = 2.5 S (typ.)
- Low leakage current: IDSS = 100 μA (max) (VDS = 600 V)
- Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings
Drain-Source Voltage: 600V
Gate-Source Voltage: +/- 30V
Drain Current-continuous@ TC=25 deg. C: 3.5A
Drainl Power Dissipation: 5W
Single Pulse Avalanche Energy: 201mJ
Avalanche Current: 3.5A
Max. Operating Temperature: 150 Deg. C.

Drain-Source Breakdown Voltage: 600V min.
Gate Threshold Voltage: 2.0V min. / 4.0V max.
Drain-Source On-Resistance: 2.2 ohm 9max)
Input Capacitance: 550pF
Switching Time:
- Rise Time: 12ns
- Turn-On Time: 45ns
- Fall Time: 13ns
- Turn-Off Time: 80ns

Manufactured by: Toshiba®
Part Number: 2SK3567

Full Datasheet: Toshiba® 2SK3567 Field Effect Transistor