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MJE802G 4A 80V NPN Bipolar Darlington Power Transistor ON Semiconductor®

MJE802G 4A 80V NPN Bipolar Darlington Power Transistor ON Semiconductor®

Manufacturer: ON Semiconductor®
Part Number: MJE802G
Amps: 4
Voltage: 80
Watts: 40
Package: TO-225A
Mounting: Through Hole
Number Leads/Terminals: 3
Color: Black
Temperature: 150
Termination Method: Solder

Price: $0.50
190 available for immediate delivery
Code: X109APR10
Weight: 0.05oz ONZ
Quantity:

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Additional Information

BJT Darlington Power Transistors
NPN

Designed for general−purpose amplifier and low−speed switching applications.

Collector−Emitter Voltage: 80.0V
Collector−Base Voltage: 80.0V
Emitter−Base Voltage: 5.0V
Collector Current: 4.0A
Base Current: 0.1A
Total Power Dissipation @ TC = 25C: 40.0W
Operating and Storage Junction Temperature Range: -55 to 150°C

Manufactured by: ON Semiconductor
Part Number: MJE802G

Full Datasheet: ON Semi 4A 40W Complementary Silicon Transistor