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ISL9V3040S3ST Transistor IGBT Chip Fairchild

ISL9V3040S3ST Transistor IGBT Chip Fairchild

Manufacturer: Fairchild
Part Number: ISL9V3040S3ST
Package: D2PAK
Lead/Terminal Type: Surface Mount
Number Leads/Terminals: 3

Price: $2.05
273 available for immediate delivery
Code: CS191PD
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Additional Information


Transistor IGBT Chips
N-Channel
TO-263 D2-Pak Package

Features:
Space saving D-Pak package availability
SCIS Energy = 300mJ at TJ = 25oC
Logic Level Gate Drive

Typical Electrical Specs @ 25°C unless otherwise specified

OFF State:
Collector to Emitter Breakdown Voltage: 400V
- (IC = 2mA, VGE = 0,RG = 1KΩ,TJ = -40 to 150°C)
Emitter to Collector Breakdown Voltage: 30V min.
- (IC = -75mA, VGE = 0V,TC = 25°C)
Gate to Emitter Breakdown Voltage: ±14V
- (IGES = ± 2mA)
Collector to Emitter Leakage Current: 25uA max.
- (VCER = 250V,RG = 1KΩ, TC=25°C)
Emitter to Collector Leakage Current: 1mA
- (VEC = 24V,TC=25°C)

ON State:
Collector to Emitter Saturation Voltage: 1.25V
- (IC = 6A,VGE = 4V, TC=25°C)
Collector to Emitter Saturation Voltage: 1.9V
- (IC = 15A,VGE = 4.5V, TC=150°C)

DYNAMIC:
Gate Charge: 17nC
- (IC = 10A, VCE = 12V,VGE = 5V)
Gate to Emitter Threshold Voltage: 2.2V max.
- (IC = 1.0mA,VCE = VGE,TC=25°C)
Gate to Emitter Plateau Voltage: 3.0V
- (IC = 10A, VCE = 12V)

SWITCHING:
Current Turn-On Delay Time-Resistive: 0.7us
- (VCE = 14V, RL = 1Ω,VGE = 5V, RG = 1KΩ,TJ = 25°C)
Current Rise Time-Resistive: 2.1us
- (VCE = 14V, RL = 1Ω,VGE = 5V, RG = 1KΩ,TJ = 25°C)
Self Clamped Inductive Switching: 300mJ max.
- (TJ = 25°C, L = 3.0 mHy,RG = 1KΩ, VGE = 5V)

Applications:
Automotive Ignition Coli Driver Circuits
Coil- On Plug Applications

Manufactured by: Fairchild
Part Number: ISL9V3040S3ST

Full Datasheet: ISL9V3040S3ST