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BF998 Dual Gate Mosfet Transistor Philips

BF998 Dual Gate Mosfet Transistor Philips

Manufacturer: Philips
Part Number: BF998
Package: SOT143
Lead/Terminal Type: Surface Mount
Number Leads/Terminals: 4

Price: $0.50
1698 available for immediate delivery
Code: J307APF08
Weight: 0.01oz ONZ
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Additional Information

Dual Gate MosFET Transistors
Silicon N-Channel

Features:
- Short channel transistor with high forward transfer admittance to input capacitance ratio
- Low noise gain controlled amplifier up to 1 GHz.

Drain-Source Voltage: 12.0V max.
Drain Current: 30mA max.
Total Power Dissipation: 200mW max.
Forward Transfer Admittance: 24mS typ.
Input Capacitance @ Gate 1: 2.1pF typ..
Reverse Transfer Capacitance (f = 1MHz): 25pF typ.
Noise Figure (f = 800MHz): 1.0dB typ.
Operating Junction Temperature: 150°C max.

Static Characteristics (Tj = 25°C unless otherwise specified)
Gate 1-Source Breakdown Voltage (VG2-S = VDS = 0; IG1-SS = ±10 mA): 6.0V min. ; 20.0V max.
Gate 2-Source Breakdown Voltage (VG1-S = VDS = 0; IG2-SS = ±10 mA): 6.0V min. ; 20.0V max.
Gate 1-Source Cut-Off Voltage (VG2-S = 4.0V; VDS = 8.0V; ID = 20uA): 2.0V max.
Gate 2-Source Cut-Off Voltage (VG1-S = 0; VDS = 8.0V; ID = 20uA): 1.5V max.
Gate 1 Cut-Off Current (VG2-S = VDS = 0; VG1-S = ±5 V): 50nA max.
Gate 2 Cut-Off Current (VG1-S = VDS = 0; VG2-S = ±5 V): 50nA max.

Applications:
VHF and UHF applications with 12 V supply voltage
- Television Tuners
- Professional Communications Equipment

Manufactured by: Philips
Part Number: BF998

Full Datasheet: Philips Mosfet BF998