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BC807-40 E6327 PNP Silicon AF Transistor Infineon

BC807-40 E6327 PNP Silicon AF Transistor Infineon

Manufacturer: Infineon
Part Number: BC807-40 E6327
Package: SOT23-3
Lead/Terminal Type: Surface Mount
Number Leads/Terminals: 3
RoHS Compliant: Yes

Price: $0.50
2995 available for immediate delivery
Code: J492APF12
Weight: 0.01oz ONZ
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Additional Information

PNP Silicon AF Transistors

Features:
- General AF Applications
- High Collector Current
- High Current Gain
- Low Collector-Emitter Saturation Voltage

Maximum Ratings
Collector-emitter voltage: 45V
Collector-base voltage: 50V
Emitter-base voltage: 5mA
Collector current: 500mA
Peak collector current: 1000mA
Peak collector current: 100mA
Peak base current: 200mA
Total power dissipation-TS ≤ 79C: 330mW

DC Characteristics
Collector-emitter breakdown voltage (IC = 10 mA, IB = 0): 45V min.
Collector-base breakdown voltage (IC = 10 μA, IE = 0): 50V min.
Emitter-base breakdown voltage (IE = 10 μA, IC = 0): 5.0V min.
Collector-base cutoff current (VCB = 25 V, IE = 0): 0.1uA max.
Emitter-base cutoff current (VEB = 4 V, IC = 0): 100nA max.
DC current gain (IC = 500 mA, VCE = 1 V): 40
Collector-emitter saturation voltage (IC = 500 mA, IB = 50 mA): 0.7V max.
Base emitter saturation voltage (IC = 500 mA, IB = 50 mA): 1.2V max.

AC Characteristics:
Transition frequency (IC = 50 mA, VCE = 5 V, f = 100 MHz): 200MHz typ.
Collector-base capacitance (VCB = 10 V, f = 1 MHz): 8pF typ.
Emitter-base capacitance (VEB = 0.5 V, f = 1 MHz): 60pF typ.

Manufactured by: Infineon
Part Number: BC807-40 E6327

Full Datasheet: PNP AF Transistor BC807-40 E6327

RoHS Compliant