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BD677A-S NPN Epitaxial Silicon Transistor Samsung

BD677A-S NPN Epitaxial Silicon Transistor Samsung

Manufacturer: Samsung
Part Number: BD677A-S
Package: TO-126
Lead/Terminal Type: Radial
Number Leads/Terminals: 3
Material: Silicon

Price: $0.42
2290 available for immediate delivery
Code: T488PE01
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10-99$0.40
100+$0.35
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Additional Information


NPN Epitaxial Silicon Transistors
Medium Power Darlington
Complement BD678A

ELECTRICAL CHARACTERISTICS (TC=25�C unless otherwise noted):
Collector-Emitter Sustaining Voltage (IC = 50mA, IB = 0): 60V min.
Collector-Base Voltage (VCB = 60V, IE = 0): 200uA max.
Collector Cut-off Current (VCE = 60V, VBE = 0): 500uA max.
Emitter Cut-off Current (VEB = 5V, IC = 0): 2mA max.
DC Current Gain (VCE = 3V, IC = 2A): 750 min.
Collector-Emitter Saturation Voltage (IC = 2A, IB = 40mA): 2.8V max.
Base-Emitter ON Voltage (VCE = 3V, IC = 2A): 2.5V max.

Manufactured by: Samsung
Part Number: BD677A-S

Full Datasheet: BD677A-Fairchild

For reference only, we are providing a datasheet for this part number, please note it is from a different manufacturer. West Florida Components assumes no liability for this information.