MTD2955ET4 12A 60V TMOS E-FET Transistor ON Semiconductor
Some images are stock photos close Manufacturer: On Semiconductor Part Number: MTD2955ET4 Amps: 12 Voltage: 60 Package: DPAK Number Leads/Terminals: 3	Price: $1.05 Shipping Weight: 0.01 ounces 1600 available for immediate delivery Product code: IC610PE12
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Item Specifications and Additional Information: DESCRIPTION / ADDITIONAL INFORMATION TMOS E-FET™ Transistors Power Field Effect Transistor Features: - Avalanche Energy Specified - Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode - Diode is Characterized for Use in Bridge Circuits - IDSS and VDS(on) Specified at Elevated Temperature ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless Otherwise Noted) OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 uAdc): 60V min. Temperature Coefficient (Positive): 85mV/°C typ. Zero Gate Voltage Drain Current ((VDS = 60 Vdc, VGS = 0 Vdc): 10uA ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = 250 uAdc): 2.0V to 4.0V Temperature Coefficient (Negative): 3.0mV/°C Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 6.0 Adc): 0.26 ohm Drain-Source On-Voltage (VGS = 10 Vdc ; ID = 12 Adc): 4.3V max. DYNAMIC CHARACTERISTICS ((VDS = 25 Vdc, VGS = 0 Vdc,f = 1.0 MHz) Input Capacitance: 565pF typ. Output Capacitance: 225pF typ. Reverse Transfer Capacitance: 45pF typ. SWITCHING CHARACTERISTICS (VDD = 30 Vdc, ID = 12 Adc,VGS = 10 Vdc,RG= 9.1Ω) Turn-On Delay Time: 9.0ns typ. Rise Time: 39ns typ. Turn-Off Delay Time: 17ns typ. Fall Time: 8.0ns typ. Manufactured by: ON Semiconductor Part Number: MTD2955ET4 Full Datasheet: MTD2955ET4

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