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GA300TD60U 300A 600V IGBT Half-Bridge Dual Int-A-Pak

GA300TD60U 300A 600V IGBT Half-Bridge Dual Int-A-Pak

Manufacturer: International Rectifier®
Part Number: GA300TD60U
Amps: 300
Voltage: 600
Watts: 880
Lead/Terminal Type: Screw
Number Leads/Terminals: 3
Color: black
Temperature: -40 to 150°C
Size (mm): 107.3 x 62 x 30

Price: $140.00
3 available for immediate delivery
Code: DI047PD
Weight: 13.00oz ONZ

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Additional Information

Ultra-Fast Half Bridge IGBT Module

Max. Ratings:
Collector-to-Emitter Voltage: 600V
Continuous Collector Current: 300A
Pulsed Collector Current: 600A
Peak Switching Current: 600A
Peak Diode Forward Current: 600A
Gate-to-Emitter Voltage: +/-20V
RMS Isolation Voltage: 2500V
(Any Terminal to Case, t=1 min)
Max. Power Dissipation: 880W @ 25°C
Max. Power Dissipation: 460W @ 85°C
Operating Junction Temperature: -40 to 150°C

Electrical Characteristics: (25°C unless otherwise noted)
Collector-to-Emitter Breakdown Voltage (VGE=0V, IC=1mA): 600V min.
Collector-to-Emitter Voltage (VGE=15V, IC=300mA): 1.8V typ. ; 2.3V max.
Gate Threshold Voltage(IC=1.75mA): 3.0V min. ; 6.0V max.
Temperature Coeff. of Threshold Voltage (VCE=VGE, IC=1.75mA): -11mV/°C typ.
Forward Transductance (VCE=25V, IC=300A): 269S typ.
Collector-to-Emitter Leaking Current(VGE=0V, VCE=600V): 1.0mA max.
Diode Forward Voltage-Maximum (IF=300A, VGE=0V): 3.3V typ.
Gate-to-Emitter Leakage Current: 400nA max.

Features:
Ultrafast: Optimized for high operating frequencies 8-40kHz in hard switching, >200kHz in resonant mode
Very low conduction and switching losses
HEXFRED antiparallel diodes with ultra-soft recovery
Increased operating efficiency
Direct mounting to heatsink
Performance optimized for power convrsion: UPS,SMPS, Welding
Lower EMI, requires less snubbing

Manufactured by: International Rectifier®
Part number: GA300TD60U

Full datasheet: GA300TD60U