Clicky

MG200Q1US51 200A 1200V IGBT GTR Module Silicon N Channel

MG200Q1US51 200A 1200V IGBT GTR Module Silicon N Channel

Manufacturer: Toshiba
Part Number: MG200Q1US51
Amps: 200
Voltage: 1200

Price: $75.00
Sorry, we are currently sold out of
'MG200Q1US51 200A 1200V IGBT GTR Module Silicon N Channel'.
Please check back later.
Code: DI048PD
Quantity:

First Class Mail Shipping Costs:

Order Total Minimum
Order Total Maximum
USA First Class Shipping Rates
$00.01
$25.00
$5.85
$25.01
$35.00
$6.85
$35.01
$45.00
$8.85
$45.01
$55.00
$9.85
$55.01
$75.01
$11.85
$75.01
$100.00
$12.85
$100.01
$200.00
$14.85
$200.01
$300.00
$15.85
$300.01
$500.00
$17.85
$500.01
+
$18.85

Priority Mail Shipping Costs:

Order Total Minimum
Order Total Maximum
USA Priority Mail Shipping Rates
$00.01
$25.00
$10.50
$25.01
$35.00
$11.50
$35.01
$45.00
$12.50
$45.01
$55.00
$13.50
$55.01
$75.01
$14.50
$75.01
$100.00
$16.50
$100.01
$200.00
$18.50
$200.01
$300.00
$21.50
$300.01
$500.00
$24.50
$500.01
+
$25.50

Canada First Class International (see Shipping page for exclusions)

Order Total Minimum
Order Total Maximum
Canada First Class International
$00.01
$45.00
$15.95
$45.01
$90.00
$29.95
$90.01
$150.00
$49.95
$150.01
$300.00
$59.95
$300.01
$700.00
$79.95
$700.01
$2000.00
$99.95

Canada Priority Mail (see Shipping page for exclusions)

Order Total Minimum
Order Total Maximum
Canada Priority Mail
$00.01
$45.00
$29.95
$45.01
$90.00
$39.95
$90.01
$150.00
$59.95
$150.01
$300.00
$79.95
$300.01
$700.00
$99.95
$700.01
$2000.00
$109.95

International - Outside US / CA (see Shipping page for exclusions)

Order Total Minimum
Order Total Maximum
International - Outside US / CA
$100.00
$150.00
$79.95
$150.01
$300.00
$99.95
$300.01
$500.00
$139.95
$500.01
$1000.00
$169.95
  View shipping costs

Additional Information


High Power IGBT Modules

Max. Ratings:
Collector-Emitter Voltage: 1200V
Gate-Emitter Voltage: 20V
Collector Current (DC)@ 25C: 300A
Forward Current: (DC): 200A
Collector Power Dissipation: 1500W
Junction Temperature: 150C
Isolation Voltage (AC 1 min.): 2500V

Electrical Characteristics (@ 25C):
Gate Leakage Current (VGE=20V, VCE=0): 500nA max.
Collector Cut-Off Current (VCE=1200V, VGE=0): 4.0mA max.
Gate-Emitter Cut-Off Voltage (IC=200mA, VCE=5V): 3.0V min. ; 6.0V max.
Collector-Emitter Saturation Voltage: 2.8V typ. ; 3.6V max.
(IC=200A, VGE=15V, Tj=25C)
Input Capacitance (VCE=10V, VGE=0,f=1MHz): 24nF
Switching Time: (Inductive Load VCC=600V, IC=200A, VGE=15V, RG=4.7Ω)
-Turn-on Time: 0.05s typ.
-Rise Time: 0.05s typ.
-Turn-on Time: 0.2s typ.
-Turn-off Delay Time: 0.5s typ.
-Fall Time: 0.1s typ. ; 0.3s max.
-Turn-off Time: 0.6s typ.
Forward Voltage(IF=200A, VGE=0): 2.4V typ. ; 3.5V max
Reverse Recovery Time: 0.15s typ. ; 0.3s max.
(IF=200A, VGE=-10V, di/dt=700A/s)

Features:
High input impedance
High Speed
Low saturation voltage
Enhancement-mode
Electrodes are isolated from case

Applications:
High Power Switching
Motor Controls

Manufactured by: Toshiba
Part number: MG200Q1US51

Full datasheet: MG200Q1US51