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MG200Q1US51 200A 1200V IGBT GTR Module Silicon N Channel

MG200Q1US51 200A 1200V IGBT GTR Module Silicon N Channel

Manufacturer: Toshiba
Part Number: MG200Q1US51
Amps: 200
Voltage: 1200

Price: $75.00
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Code: DI048PD
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Additional Information


High Power IGBT Modules

Max. Ratings:
Collector-Emitter Voltage: 1200V
Gate-Emitter Voltage: ±20V
Collector Current (DC)@ 25°C: 300A
Forward Current: (DC): 200A
Collector Power Dissipation: 1500W
Junction Temperature: 150°C
Isolation Voltage (AC 1 min.): 2500V

Electrical Characteristics (@ 25°C):
Gate Leakage Current (VGE=±20V, VCE=0): ±500nA max.
Collector Cut-Off Current (VCE=1200V, VGE=0): 4.0mA max.
Gate-Emitter Cut-Off Voltage (IC=200mA, VCE=5V): 3.0V min. ; 6.0V max.
Collector-Emitter Saturation Voltage: 2.8V typ. ; 3.6V max.
(IC=200A, VGE=15V, Tj=25°C)
Input Capacitance (VCE=10V, VGE=0,f=1MHz): 24nF
Switching Time: (Inductive Load VCC=600V, IC=200A, VGE=±15V, RG=4.7Ω)
-Turn-on Time: 0.05µs typ.
-Rise Time: 0.05µs typ.
-Turn-on Time: 0.2µs typ.
-Turn-off Delay Time: 0.5µs typ.
-Fall Time: 0.1µs typ. ; 0.3µs max.
-Turn-off Time: 0.6µs typ.
Forward Voltage(IF=200A, VGE=0): 2.4V typ. ; 3.5V max
Reverse Recovery Time: 0.15µs typ. ; 0.3µs max.
(IF=200A, VGE=-10V, di/dt=700A/µs)

Features:
High input impedance
High Speed
Low saturation voltage
Enhancement-mode
Electrodes are isolated from case

Applications:
High Power Switching
Motor Controls

Manufactured by: Toshiba
Part number: MG200Q1US51

Full datasheet: MG200Q1US51