P28F256A-120 256K 32K x 8 CMOS IC Flash Memory Intel
Price: $7.50
10 available for immediate delivery
Code: IC547PE10
Weight: 0.18oz
Additional Information
DESCRIPTION / ADDITIONAL INFORMATIONCMOS ICs Flash Memory
256K - 32K x 8
Features:
Flash Electrical Chip-Erase
- 1 Second Typical Chip-Erase
Quick-pulse Programming Algorithm
- 10us Typ. Byte-Program
- 0.5 Second Chip-Program
12V ±5% Vpp
100,000 Erase/Program Cycles
High Performance Read
- 120ns Max. Access Time
CMOS Low Power Consumption
- 10mA Typ. Active Current
- 50uA Typ. Standby Current
- 0W Data Retention Power
Integrated Program/Erase Stop Timer
Noise Immunity Features
- ±10% Vcc Tolerance
- Max. Latch=up Immunity through EPI Processing
ETOX II FLash Nonvolatile Technology
- EPROM-Compatible Process Base
- High-Volume Manufacturing Experience
Operating Conditions:
Operating Temperature: 0°C min. ; 70°C max.
Vcc Supply Voltage: 4.5V min. ; 5.5V max.
DC Electrical Characteristics-CMOS Compatible:
Input Leakage Current (Vcc=Vcc max, VIN=Vcc or Vss): ±1.0uA max.
Output Leakage Current (Vcc=Vcc max, Vout=Vcc or Vss): ±10.0uA max.
Vcc Programming Current (Programming in Progress): 1.0mA typ. ; 10mA max.
Vcc Erase Current (Erasure in Progress): 5.0mA typ. ; 15.0mA max.
Input Low Voltage: -0.5V min. ; 0.8V max.
Input High Voltage: 0.7Vcc min. ; Vcc + 0.5V max.
Output Low Voltage (IOL=5.8mA,VCC=VCC min): 0.45V max.
Output High Voltage (IOH=-2.5mA,VCC=VCC min): 0.85VCC min.
Capacitance:
Address/Control (VIN=0V): 6pF max.
Output (VOUT=0V): 12pF max.
Manufactured by: Intel
Part Number: P28F256A-120
Full Datasheet: P28F256A-120