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MTD2955ET4 12A 60V TMOS E-FET Transistor ON Semiconductor

MTD2955ET4 12A 60V TMOS E-FET Transistor ON Semiconductor

Manufacturer: On Semiconductor
Part Number: MTD2955ET4
Amps: 12
Voltage: 60
Package: DPAK
Number Leads/Terminals: 3

Price: $1.05
1600 available for immediate delivery
Code: IC610PE12
Weight: 0.01oz ONZ
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Additional Information

DESCRIPTION / ADDITIONAL INFORMATION

TMOS E-FET Transistors
Power Field Effect Transistor

Features:
- Avalanche Energy Specified
- Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
- Diode is Characterized for Use in Bridge Circuits
- IDSS and VDS(on) Specified at Elevated Temperature

ELECTRICAL CHARACTERISTICS (TJ = 25C Unless Otherwise Noted)
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 uAdc): 60V min.
Temperature Coefficient (Positive): 85mV/C typ.
Zero Gate Voltage Drain Current ((VDS = 60 Vdc, VGS = 0 Vdc): 10uA

ON CHARACTERISTICS
Gate Threshold Voltage (VDS = VGS, ID = 250 uAdc): 2.0V to 4.0V
Temperature Coefficient (Negative): 3.0mV/C
Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 6.0 Adc): 0.26 ohm
Drain-Source On-Voltage (VGS = 10 Vdc ; ID = 12 Adc): 4.3V max.

DYNAMIC CHARACTERISTICS ((VDS = 25 Vdc, VGS = 0 Vdc,f = 1.0 MHz)
Input Capacitance: 565pF typ.
Output Capacitance: 225pF typ.
Reverse Transfer Capacitance: 45pF typ.

SWITCHING CHARACTERISTICS (VDD = 30 Vdc, ID = 12 Adc,VGS = 10 Vdc,RG= 9.1Ω)
Turn-On Delay Time: 9.0ns typ.
Rise Time: 39ns typ.
Turn-Off Delay Time: 17ns typ.
Fall Time: 8.0ns typ.

Manufactured by: ON Semiconductor
Part Number: MTD2955ET4

Full Datasheet: MTD2955ET4