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IRGPH40FD2 IGBT Insulated Gate Bipolar Transistor International Rectifier

IRGPH40FD2 IGBT Insulated Gate Bipolar Transistor International Rectifier

Manufacturer: International Rectifier
Part Number: IRGPH40FD2
Package: TO-247AC
Number Leads/Terminals: 3

Price: $14.29
7 available for immediate delivery
Code: IC656APH01
Weight: 0.20oz ONZ
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Additional Information

IGBT Transistors

Features:
- N-Channel
- Switching-loss rating includes all "tail" losses
- Optimized for medium operating frequency (1 to 10kHz)

Maximum Ratings
Collector-to-Emitter Voltage: 1200V
Continuous Collector Current (IC @ TC = 25°C): 29A
Pulsed Collector Current: 58A
Gate-to-Emitter Voltage: ±20V
Reverse Voltage Avalanche Energy: 15mJ
Maximum Power Dissipation (PD @ TC = 25°C): 160W
Operating Junction and Storage Temperature Range: -55°C to 150°C

Electrical Characteristics (TJ=25°C unless otherwise noted):
Emitter-to-Collector Breakdown Voltage (VGE = 0V, IC = 1.0A): 20V min.
Temperature Coefficient of Breakdown Voltage (VGE = 0V, IC = 1.0mA): 1.3V/°C typ.
Temperature Coefficient of Threshold Voltage (VCE = VGE, IC = 250uA): -13mV/°C typ.
Gate-to-Emitter Leakage Current (VGE = ±20V): ±100nA max.

Typical Switching Characteristics (TJ=25°C unless otherwise noted):
(SEE DATASHEET FOR CONDITIONS)
Total Gate Charge (turn-on): 45nC
Turn-On Delay Time: 33ns
Rise Time: 17ns
Fall Time: 210ns
Total Switching Loss: 4.0mJ
Internal Emitter Inductance: 13nH
Input Capacitance: 1200pF

Manufactured by: International Rectifier
Part Number: IRGPH40FD2

Full Datasheet: International Rectifier IGBT IRGPH40FD2