Tag Archives: IBM

Non-Volatile Memory from Carbon

So far, many problems have inhibited development of carbon based memory devices. Not any more, as IBM and the EMPA have solved those problems and come up with the possible use of oxygenated amorphous carbon for non-volatile memory applications. The new non-volatile memory is based on a Redox reaction that takes place in thin films of oxygenated amorphous carbon known as a-COx. The film is a process of PVD or Physical Vapor Deposition. EMPA, the Swiss Electron Microscopy Center and IBM, Zurich, Read more [...]