The BUZ11 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switchng transistors requiring high speed and low gate drive power. The BUZ11 is also used for DC-DC and DC-AC converters and in the automotive environment for injection, ABS, airbags, lampdrivers and more.
- 33A 50V
- Nanosecond Switching Speed
- Linear Transfer Characteristics
- High Input Impedance
The BUZ11 is in a TO220 package.
If you are looking at the BUZ11 with the drain (flange) at the top, the left pin is the GATE, the middle is the DRAIN, and the right lead is the SOURCE.