Daily Archives: September 19, 2018

RF Transistors using more Germanium

So far, gallium arsenide was the choice of material for building fast radio frequency transistors. However, that scenario is changing fast. Germanium is fast catching up, as it is less expensive and more compatible with CMOS and silicon. In this connection, the European research institute Imec has presented a pair of papers featuring gate-all-around (GAA) transistors at the 2017 Symposia on VLSI Technology and Circuits in Japan. They claim that GAA transistors can outperform standard CMOS below the Read more [...]