Tag Archives: MRAM

Magneto resistive random access technology (MRAM) for better memory storage

Technologists researching at the laboratories of the National University of Singapore in the department of Electrical and Computer Engineering have developed a new technology that will help in enhancing storing information in electronic systems in a better and more durable manner. Called Magneto Resistive Random Access Technology, this innovative method increases the storage space considerably and ensures that all fresh data will remain intact, even when there is a power failure. The team of researchers, Read more [...]